bar 64 ... jul-29-1999 1 silicon pin diodes ? high voltage current controlled rf resistor for rf attenuator and switches ? frequency range above 1 mhz ? low resistance and short carrier lifetime ? for frequencies up to 3 ghz 1 2 3 vps05161 bar 64 bar 64-04 bar 64-06 bar 64-05 eha07005 1 3 2 eha07006 1 3 2 eha07004 1 3 2 13 eha07002 type marking pin configuration package bar 64 bar 64-04 bar 64-05 bar 64-06 pos pps prs pss 1 = a 1 = a1 1 = a1 1 = c1 2 n.c. 2 = c2 2 = a2 2 = c2 3 = c 3=c1/a2 3=c1/c2 3=a1/a2 sot-23 sot-23 sot-23 sot-23 maximum ratings parameter symbol value unit diode reverse voltage 200 v v r forward current i f ma 100 mw total power dissipation bar 64, t s 90c 250 p tot bar 64-04, bar 64-05, bar 64-06, t s 65c 250 p tot t j 150 junction temperature c operating temperature range t op -55 ... 150 storage temperature t stg -55 ... 150 thermal resistance k/w 320 r thja junction-ambient 1) bar 64 junction-ambient 1) bar 64-04,05,06 r thja 500 r thjs junction-soldering point bar 64 240 junction-soldering point bar 64-04,05,06 r thjs 340 1) package mounted on alumina 15mm x 16.7mm x 0.7mm
bar 64 ... jul-29-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (br) 200 - - v reverse current v r = 80 v i r - - 50 na forward voltage i f = 50 ma v f - - 1.1 v ac characteristics diode capacitance v r = 20 v, f = 1 mhz c t - 0.23 0.35 pf forward resistance i f = 1 ma, f = 100 mhz i f = 10 ma, f = 100 mhz i f = 100 ma, f = 100 mhz r f - - - 12.5 2.1 0.85 20 3.8 1.35 ? charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma rr - 1.55 - s series inductance l s - 1.4 - nh
bar 64 ... jul-29-1999 3 forward current i f = f ( t a *, t s ) * mounted on alumina bar 64-04, -05, -06 0 20 40 60 80 100 120 c 150 t a ,t s 0 10 20 30 40 50 60 70 80 90 100 ma 120 i f t s t a forward current i f = f ( t a *, t s ) * mounted on alumina bar 64 0 20 40 60 80 100 120 c 150 t a ,t s 0 10 20 30 40 50 60 70 80 90 100 ma 120 i f t s t a permissible pulse load r thjs = f ( t p ) bar 64 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load i fmax / i fdc = f ( t p ) bar 64 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bar 64 ... jul-29-1999 4 permissible pulse load r thjs = f ( t p ) bar 64-04, -05, -06 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load i fmax / i fdc = f ( t p ) bar 64-04, -05, -06 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 forward resistance r f = f ( i f ) f = 100mhz ehd07135 f f r ? 10 -2 -1 10 ma 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 forward current i f = f ( v f ) t a = parameter v ehd07137 f f ma -2 10 10 -1 10 0 10 1 10 2 0 0.5 1.0 1.5 v t a = -40 ?c 25 85 ?c ?c
bar 64 ... jul-29-1999 5 diode capacitance c t = f ( v r ) f = 1mhz v ehd07136 r t c 0 0v pf 0.1 0.2 0.3 0.4 0.5 10 20
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